Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope
نویسندگان
چکیده
منابع مشابه
A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope.
We present a facile CMOS-compatible fabrication of lateral gate-all-around (GAA) field effect transistors (FETs) based on concentric Si-SiO₂/N(++)Si core-multi-shell nanowires (NWs). Si-SiO₂/N(++)Si core-multi-shell NWs were prepared by sequential Si NW growth, thermal oxidation and Si deposition processes in a single chamber. The GAA NW FET was then fabricated using the Si core, SiO₂ inner-she...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2013
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2013.2247737